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dc.date.accessioned2019-12-03T19:13:24Z
dc.date.available2020-09-13T22:46:17Z
dc.date.created2018-10-05T08:52:36Z
dc.date.issued2018
dc.identifier.citationGrini, Sigbjørn Ross, Nils Persson, Clas Platzer-Björkman, Charlotte Vines, Lasse . Low temperature incorporation of selenium in Cu2ZnSnS4: Diffusion and nucleation. Thin Solid Films. 2018, 665, 159-163
dc.identifier.urihttp://hdl.handle.net/10852/71133
dc.description.abstractBand gap grading of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells can be achieved by varying the Sr = [S]/([S] + [Se]) ratio in the absorber layer with depth. One approach is a two-step annealing process where the absorber is first sulfurized to Cu2ZnSnS4 (CZTS) followed by selenization to form CZTSSe. However, once nucleation of CZTSSe initiates, the rapid interchange of S and Se limits the control over the Sr ratio with depth. Here, we have studied incorporation of Se into CZTS and observed the behavior of Se below and up to the nucleation temperature of CZTSSe. Se diffusion at 337 and 360 °C is dominated by grain boundary diffusion while some increase of Se is also seen in the region from 100 to 800 nm from the surface. After selenization at 409 °C, recrystallization is observed and CZTSSe grains are formed. The recrystallization is more rapid for a smaller average grain size and is facilitated by diffusion of Na from the back contact. The grain boundary diffusion is identified with secondary ion mass spectrometry measurements by measuring the accumulation in the CZTS/Mo interface for three samples with different average grain size.
dc.languageEN
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.titleLow temperature incorporation of selenium in Cu2ZnSnS4: Diffusion and nucleation
dc.typeJournal article
dc.creator.authorGrini, Sigbjørn
dc.creator.authorRoss, Nils
dc.creator.authorPersson, Clas
dc.creator.authorPlatzer-Björkman, Charlotte
dc.creator.authorVines, Lasse
cristin.unitcode185,15,17,20
cristin.unitnameSenter for Materialvitenskap og Nanoteknologi fysikk
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1
dc.identifier.cristin1618138
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Thin Solid Films&rft.volume=665&rft.spage=159&rft.date=2018
dc.identifier.jtitleThin Solid Films
dc.identifier.volume665
dc.identifier.startpage159
dc.identifier.endpage163
dc.identifier.doihttps://doi.org/10.1016/j.tsf.2018.09.024
dc.identifier.urnURN:NBN:no-74239
dc.type.documentTidsskriftartikkel
dc.type.peerreviewedPeer reviewed
dc.source.issn0040-6090
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/71133/2/Manuscript_online.pdf
dc.type.versionAcceptedVersion
dc.relation.projectNFR/243642
dc.relation.projectNFR/245963


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