We theoretically consider the spin Seebeck effect, the charge Seebeck coefficient, and the thermoelectric figure of merit in superconducting hybrid structures including either magnetic textures or intrinsic spin-orbit ...

Introduction: The promotion of a healthy diet, physical activity and measurement of blood glucose levels are essential components in the care for women with gestational diabetes mellitus (GDM). Smartphones offer a new way ...

Crude oil spills are a worldwide ocean conservation threat. Fish are particularly vulnerable to the oiling of spawning habitats, and crude oil causes severe abnormalities in embryos and larvae. However, the underlying ...

Background: During pregnancy, many women experience sleep problems and anxiety that require treatment. The long-term safety for the child of maternal benzodiazepine (BZD) and z-hypnotic use during pregnancy remains ...

Host-intrinsic factors as well as environmental changes are known to be strong evolutionary drivers defining the genetic foundation of immunity. Using a novel set of teleost genomes and a time-calibrated phylogeny, we here ...

Exhumed reservoirs providing evidence of CO2 accumulation and transport in geological history offer a unique possibility to supplement our knowledge on leakage processes observed along faults and fractures. A field location ...

Two hybrid van der Waals density functionals (vdW-DFs) are developed using 25% Fock exchange with (i) the consistent-exchange vdW-DF-cx functional [K. Berland and P. Hyldgaard, Phys. Rev. B 89, 035412 (2014)] and (ii) with ...

Climate change will affect the population dynamics of many species, yet the consequences for the long-term persistence of populations are poorly understood. A major reason for this is that density-dependent feedback effects ...

Subduction initiation is a key in understanding the dynamic evolution of the Earth and its fundamental difference to all other rocky planetary bodies in our solar system. Despite recent progress, the question about how a ...

Great genetic variability among teleost immunomes, with gene losses and expansions of central adaptive and innate components, has been discovered through genome sequencing over the last few years. Here, we demonstrate that ...

ZnO1−xYx with chalcogen element Y exhibits intriguing optoelectronic properties as the alloying strongly impacts the band-gap energy Eg(x). In this work, we analyze and compare the electronic structures and the dielectric ...

The Hall coefficient RH and electrical conductivity of misfit calcium cobalt oxide (Ca2CoO3−δ)q(CoO2) (CCO) were measured at room temperature for different oxygen vacancy concentrations δ. Based on these and numerous ...

The aluminum–zinc-vacancy (AlZn−VZn) complex is identified as one of the dominant defects in Al-containing n-type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically ...

As-grown and pre-oxidized silicon carbide (SiC) samples of polytype 4H have been annealed at temperatures up to 1950 °C for 10 min duration using inductive heating, or at 2000 °C for 30 s using microwave heating. The samples ...

The conductivity and Seebeck coefficient of CaMnO3−δ have been studied at temperatures up to 1000 °C and in atmospheres with controlled oxygen partial pressure. Both transport coefficients were varied in situ by the ...

Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling ...

We studied the structural properties, defect formation, and thermal stability of H in hydrothermally grown ZnO single crystals implanted with H- dose ranging from 2.5×1016 to 1×1017 cm−2. H implantation is found to create ...

Diffusion of Li into ZnO from an “infinite” surface source under oxygen-rich conditions is studied using secondary ion mass spectrometry. The Li concentration-versus-depth profiles exhibit a distinct and sharp drop, which ...

The present study examines the kinetics of dry thermal oxidation of (111), (110), and (100) silicon-germanium (SiGe) thin epitaxial films and the redistribution of Ge near the oxidation interface with the aim of facilitating ...

Several fundamental aspects of the oxidation-induced redistribution of Ge in thin films of SiGe are studied. This includes the incorporation of Ge into the oxide and the formation of what is alternatively referred to as ...

High-purity epitaxial layers of n-type 4H-SiC have been implanted with 4.3-MeV Si ions to a dose of 3 × 108 cm−2 and then subjected to dry isothermal oxidation at temperatures between 1050 and 1175 °C. Analysis of the ...

By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at ∼1.75 eV and exhibiting an activation energy ...

The lateral distributions of intrinsic point defects in n-type (0001) 4H-SiC have been investigated following room temperature irradiation with a focused beam of 10 keV protons. Laterally resolved deep level transient ...

A phenomenon of wurtzite (w), zincblende (zb), and rock-salt (rs) phase separation was investigated in ZnCdO films having Cd contents in the range of 0%–60% settling a discussion on the phase stability issues in ZnCdO. ...

The interaction of hydrogen (H) with lithium (Li) and zinc vacancies (VZn) in hydrothermally grown n-type zinc oxide (ZnO) has been investigated by positron annihilation spectroscopy (PAS) and secondary ion mass spectrometry. ...

Thermal stability of originally single crystalline wurtzite MgxZn1−xO (x ⩽ 0.3) films implanted at room temperature with 166Er ions is studied by a combination of Rutherford backscattering spectrometry, time-of-flight ...

Single-phase rock-salt CdZnO films were synthesized on r-plane sapphire substrates by metal–organic chemical vapor deposition. Evolutions in growth orientations were investigated in these films as a function of Zn content ...

Thermal evolution of vacancy complexes was studied in P-doped ([P]=1018 cm−3) proton irradiated Si1−xGex with Ge contents of 10%, 20%, and 30% in the range of 250–350 °C using positron annihilation spectroscopy. The radiation ...

We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured ...

The nature of intrinsic defects in ZnO films grown by metal organic vapor phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis ...

The role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, ...