Search
Now showing items 1-5 of 5
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
We investigate the migration mechanism of the carbon vacancy (VC) in silicon carbide (SiC) using a combination of theoretical and experimental methodologies. The VC, commonly present even in state-of-the-art epitaxial SiC ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
Single crystalline bulk and epitaxially grown gallium oxide (β–Ga2O3) was irradiated by 0.6 and 1.9 MeV protons to doses ranging from 5 × 109 to 6 × 1014 cm−2 in order to study the impact on charge carrier concentration ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
The structural and optical properties of magnetron sputtered thin films of (ZnO)1−x(GaN)x deposited on zinc oxide, sapphire, and silicon oxide are studied as a function of strain accumulation and post‐deposition anneals ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
Direct evidence of the formation of nitrogen molecules (N2) after ion implantion of ZnO has been revealed by an atomically resolved scanning transmission electron microscopy (STEM)–electron energy-loss spectroscopy (EELS) ...