• English
    • Norsk
  • English 
    • English
    • Norsk
  • Administration
View Item 
  •   Home
  • Øvrige samlinger
  • Høstingsarkiver
  • CRIStin høstingsarkiv
  • View Item
  •   Home
  • Øvrige samlinger
  • Høstingsarkiver
  • CRIStin høstingsarkiv
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Role of Nitrogen in Defect Evolution in Zinc Oxide: STEM−EELS Nanoscale Investigations

Bazioti, Kalliopi; Azarov, Alexander; Johansen, Klaus Magnus H; Svensson, Bengt Gunnar; Vines, Lasse; Kuznetsov, Andrej; Prytz, Øystein
Journal article; AcceptedVersion; Peer reviewed
View/Open
Bazioti+C.+et+al.+2019.pdf (1.084Mb)
Year
2019
Permanent link
http://urn.nb.no/URN:NBN:no-77479

CRIStin
1715398

Metadata
Show metadata
Appears in the following Collection
  • Fysisk institutt [2247]
  • Det matematisk-naturvitenskapelige fakultet [244]
  • CRIStin høstingsarkiv [14985]
Original version
The Journal of Physical Chemistry Letters. 2019, 10 (16), 4725-4730, DOI: https://doi.org/10.1021/acs.jpclett.9b01472
Abstract
Direct evidence of the formation of nitrogen molecules (N2) after ion implantion of ZnO has been revealed by an atomically resolved scanning transmission electron microscopy (STEM)–electron energy-loss spectroscopy (EELS) investigation. Taking advantage of the possibility of using multiple detectors simultaneously in aberration-corrected STEM, we utilize the detailed correlation between the atomic structure and chemical identification to develop a model explaining the formation and evolution of different defect types and their interaction with N. In particular, the formation of zinc vacancy (VZn) clusters filled with N2 after heat treatment at 650 °C was observed, clearly indicating that N has not been stabilized in the O substitution site, thus limiting p-type doping. Previous results showing an exceptional thermal stability of vacancy clusters only for the case of N-doped ZnO are supported. Furthermore, VZn–N2 stabilization leads to suppression of VZn–Zni recombination; hence, the highly mobile Zn interstitials preferentially condense on the basal planes promoting formation of extended defects (basal stacking faults and stacking mismatched boundaries). The terminations of these defects provide energetically favorable sites for further N2 trapping as a way to reduce local strain fields.
 
Responsible for this website 
University of Oslo Library


Contact Us 
duo-hjelp@ub.uio.no


Privacy policy
 

 

For students / employeesSubmit master thesisAccess to restricted material

Browse

All of DUOCommunities & CollectionsBy Issue DateAuthorsTitlesThis CollectionBy Issue DateAuthorsTitles

For library staff

Login
RSS Feeds
 
Responsible for this website 
University of Oslo Library


Contact Us 
duo-hjelp@ub.uio.no


Privacy policy