Now showing items 1-20 of 33

  • Tønsberg, Einar (Master thesis / Hovedoppgave, 1937)
  • Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet (Series / Serietittel, 2006)
  • Børseth, Thomas J. Moe; Tuomisto, F; Christensen, Jens S.; Monakhov, Edouard; Svensson, Bengt Gunnar; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2008)
    The role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, ...
  • Kilpelainen, S; Kuitunen, K; Tuomisto, F; Slotte, J; Radamson, H.H.; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2010)
    Thermal evolution of vacancy complexes was studied in P-doped ([P]=1018 cm−3) proton irradiated Si1−xGex with Ge contents of 10%, 20%, and 30% in the range of 250–350 °C using positron annihilation spectroscopy. The radiation ...
  • Dong, Yufeng; Tuomisto, F; Svensson, Bengt Gunnar; Kuznetsov, Andrej; Brillson, Leonard J. (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2010)
    We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured ...
  • Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Zubiaga, Asier; Tuomisto, Filip; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2010)
    The nature of intrinsic defects in ZnO films grown by metal organic vapor phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis ...
  • Azarov, Alexander; Hallén, Anders; Du, Xiaolong; Liu, Z. L.; Svensson, Bengt Gunnar; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2011)
    Thermal stability of originally single crystalline wurtzite MgxZn1−xO (x ⩽ 0.3) films implanted at room temperature with 166Er ions is studied by a combination of Rutherford backscattering spectrometry, time-of-flight ...
  • Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Trunk, Mareike; Zhang, Tianchong; Azarov, Alexander; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2011)
    A phenomenon of wurtzite (w), zincblende (zb), and rock-salt (rs) phase separation was investigated in ZnCdO films having Cd contents in the range of 0%–60% settling a discussion on the phase stability issues in ZnCdO. ...
  • Johansen, Klaus Magnus H; Zubiaga, Asier; Tuomisto, Filip; Monakhov, Edouard; Kuznetsov, Andrej; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2011)
    The interaction of hydrogen (H) with lithium (Li) and zinc vacancies (VZn) in hydrothermally grown n-type zinc oxide (ZnO) has been investigated by positron annihilation spectroscopy (PAS) and secondary ion mass spectrometry. ...
  • Zhang, Tianchong; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2011)
    Single-phase rock-salt CdZnO films were synthesized on r-plane sapphire substrates by metal–organic chemical vapor deposition. Evolutions in growth orientations were investigated in these films as a function of Zn content ...
  • Long, Ethan Schuyler; Azarov, Alexander; Kløw, Frode; Galeckas, Augustinas; Kuznetsov, Andrej; Diplas, Spyridon (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
    Several fundamental aspects of the oxidation-induced redistribution of Ge in thin films of SiGe are studied. This includes the incorporation of Ge into the oxide and the formation of what is alternatively referred to as ...
  • Løvlie, Lars Sundnes; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
    High-purity epitaxial layers of n-type 4H-SiC have been implanted with 4.3-MeV Si ions to a dose of 3 × 108 cm−2 and then subjected to dry isothermal oxidation at temperatures between 1050 and 1175 °C. Analysis of the ...
  • Knutsen, Knut Erik; Galeckas, Augustinas; Zubiaga, Asier; Tuomisto, Filip; Farlow, Gary C.; Svensson, Bengt Gunnar; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
    By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at ∼1.75 eV and exhibiting an activation energy ...
  • Løvlie, Lars Sundnes; Vines, Lasse; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
    The lateral distributions of intrinsic point defects in n-type (0001) 4H-SiC have been investigated following room temperature irradiation with a focused beam of 10 keV protons. Laterally resolved deep level transient ...
  • Chan, K.-S.; Vines, Lasse; Johansen, Klaus Magnus H; Monakhov, Edouard; Ye, J.D; Parkinson, P; Jagadish, C; Svensson, Bengt Gunnar; Wong-Leung, J (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2013)
    We studied the structural properties, defect formation, and thermal stability of H in hydrothermally grown ZnO single crystals implanted with H- dose ranging from 2.5×1016 to 1×1017 cm−2. H implantation is found to create ...
  • Zubiaga, A.; Reurings, F.; Tuomisto, F; Plazaola, F.; Garcia, J.A.; Kuznetsov, Andrej; Egger, W.; Zuniga-Perez, J.; Munoz-Sanjose, V. (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2013)
    Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling ...
  • Knutsen, Knut Erik; Johansen, Klaus Magnus H; Neuvonen, Pekka Tapio; Svensson, Bengt Gunnar; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2013)
    Diffusion of Li into ZnO from an “infinite” surface source under oxygen-rich conditions is studied using secondary ion mass spectrometry. The Li concentration-versus-depth profiles exhibit a distinct and sharp drop, which ...
  • Long, Ethan Schuyler; Galeckas, Augustinas; Kuznetsov, Andrej; Ronda, Antoine; Favre, Luc; Berbezier, Isabelle; Radamson, Henry H. (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2013)
    The present study examines the kinetics of dry thermal oxidation of (111), (110), and (100) silicon-germanium (SiGe) thin epitaxial films and the redistribution of Ge near the oxidation interface with the aim of facilitating ...
  • Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, R; Hallen, Anders; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2014)
    As-grown and pre-oxidized silicon carbide (SiC) samples of polytype 4H have been annealed at temperatures up to 1950 °C for 10 min duration using inductive heating, or at 2000 °C for 30 s using microwave heating. The samples ...
  • Schrade, Matthias; Kabir, Rezaul; Li, Sean; Norby, Truls; Finstad, Terje (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2014)
    The conductivity and Seebeck coefficient of CaMnO3−δ have been studied at temperatures up to 1000 °C and in atmospheres with controlled oxygen partial pressure. Both transport coefficients were varied in situ by the ...