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  • Polyakov, A.Y.; Vasilev, A.A.; Shchemerov, I.V.; Chernykh, A.V.; Shetinin, I.V.; Zhevnerov, E.V.; Kochkova, A.I.; Lagov, P.B.; Miakonkikh, A.V.; Pavlov, Yu.S.; Kobets, U.A.; Lee, In-Hwan; Kuznetsov, Andrej; Pearton, S.J. (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2023)
    Lightly n-type β-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type doped β-Ga2O3 substrate was implanted with 1 MeV O ions to a fluence of 1016 cm−2. The film remained β-polymorph and showed no broadening ...