dc.date.accessioned | 2018-11-13T11:30:24Z | |
dc.date.available | 2019-02-02T23:31:40Z | |
dc.date.created | 2018-06-18T15:52:13Z | |
dc.date.issued | 2018 | |
dc.identifier.citation | Sky, Thomas Neset Johansen, Klaus Magnus H Riise, Heine Nygard Svensson, Bengt Gunnar Vines, Lasse . Gallium diffusion in zinc oxide via the paired dopant-vacancy mechanism. Journal of Applied Physics. 2018, 123(5) | |
dc.identifier.uri | http://hdl.handle.net/10852/65477 | |
dc.description.abstract | Isochronal and isothermal diffusion experiments of gallium (Ga) in zinc oxide (ZnO) have been performed in the temperature range of 900–1050 °C. The samples used consisted of a sputter-deposited and highly Ga-doped ZnO film at the surface of a single-crystal bulk material. We use a novel reaction diffusion (RD) approach to demonstrate that the diffusion behavior of Ga in ZnO is consistent with zinc vacancy (VZn) mediation via the formation and dissociation of GaZnVZn complexes. In the RD modeling, experimental diffusion data are fitted utilizing recent density-functional-theory estimates of the VZn formation energy and the binding energy of GaZnVZn. From the RD modeling, a migration energy of 2.3 eV is deduced for GaZnVZn, and a total/effective activation energy of 3.0 eV is obtained for the Ga diffusion. Furthermore, and for comparison, employing the so-called Fair model, a total/effective activation energy of 2.7 eV is obtained for the Ga diffusion, reasonably close to the total value extracted from the RD-modeling.
© 2018 AIP Publishing | en_US |
dc.language | EN | |
dc.publisher | American Institute of Physics (AIP) | |
dc.relation.ispartof | Sky, Thomas Neset (2019) Impurity Diffusion in Single Crystal Zinc Oxide. Doctoral thesis http://hdl.handle.net/10852/67145 | |
dc.relation.uri | http://hdl.handle.net/10852/67145 | |
dc.title | Gallium diffusion in zinc oxide via the paired dopant-vacancy mechanism | en_US |
dc.title.alternative | ENEngelskEnglishGallium diffusion in zinc oxide via the paired dopant-vacancy mechanism | |
dc.type | Journal article | en_US |
dc.creator.author | Sky, Thomas Neset | |
dc.creator.author | Johansen, Klaus Magnus H | |
dc.creator.author | Riise, Heine Nygard | |
dc.creator.author | Svensson, Bengt Gunnar | |
dc.creator.author | Vines, Lasse | |
cristin.unitcode | 185,15,4,90 | |
cristin.unitname | Halvlederfysikk | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 1592021 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Applied Physics&rft.volume=123&rft.spage=&rft.date=2018 | |
dc.identifier.jtitle | Journal of Applied Physics | |
dc.identifier.volume | 123 | |
dc.identifier.issue | 5 | |
dc.identifier.doi | http://dx.doi.org/10.1063/1.5000123 | |
dc.identifier.urn | URN:NBN:no-68232 | |
dc.type.document | Tidsskriftartikkel | en_US |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0021-8979 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/65477/1/1592021.pdf | |
dc.type.version | PublishedVersion | |