Browsing Fysisk institutt by Author "Qin, Ying"

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  • Trapping of multiple H atoms at the Ga(1) vacancy in b-Ga2O3 
    Fowler, W. Beall; Stavola, Michael; Qin, Ying; Weiser, Philip Michael (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Recent suggestions that hydrogen incorporation at the Ga(1) vacancy in β-Ga2O3 may have an impact on its electronic properties have led us to extend our earlier work on these defects. While our previous work provides strong ...