The topic of this thesis is radiation testing of both bipolar and CMOS semiconductors. The semiconductors which is tested is intended to be used in the front-end control system of the upcoming ATLAS particle detector which is under construction at The European Organization for Nuclear Research (CERN). The front-end system that is tested is a CAN field bus node. This node is built around two microcontrollers, a 16-bit ADC and a CAN controller. In addition there are several other circuits, e.g. voltage regulators. The CAN node has been tested as a complete working system, and not as individual components.
Due to the high intensity of radioactivity in the ATLAS detector, the electronics is required to be tested and qualified for a certain location in the detector.
This thesis deals with results from three different Total Ionizing Dose (TID) tests and one Single Event Effect (SEE) test. The result that is described is used as a foundation for the selection of the components to be used in the CAN front-end node, and as guide for the qualification process.