Cu 2 O films deposited by reactive magnetron sputtering with varying Li concentrations have been investigated by a combination of temperature-dependent Hall effect measurement and thermal admittance spectroscopy. As measured by secondary ion mass spectrometry, Li concentrations up to 5 × 10 20 Li/cm 3 have been achieved. Li doping significantly alters the electrical properties of Cu 2 O and increases hole concentration at room temperature for higher Li concentrations. Moreover, the apparent activation energy for the dominant acceptors decreases from around 0.2 eV for undoped or lightly doped Cu 2 O down to as low as 0.05 eV for higher Li concentrations.
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