dc.date.accessioned | 2020-05-19T19:56:22Z | |
dc.date.available | 2020-06-30T22:46:43Z | |
dc.date.created | 2019-12-13T09:52:48Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | Prucnal, Slawomir Berencen, Yonder Wang, Mao Georgiev, Yordan Nikolaev Erbe, Artur Khan, MB Boettger, Roman Hübner, Renè Schoenherr, Tommy Kalbacova, Jana Vines, Lasse Facsko, Stefan Engler, Martin Zahn, D. R. T. Knoch, Joachim Helm, Manfred Skorupa, Wolfgang Zhou, Shengqiang . Nanoscale n(++)-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy. Journal of Applied Physics. 2019, 125(24) | |
dc.identifier.uri | http://hdl.handle.net/10852/75989 | |
dc.description.abstract | Ge-on-Si and Ge-on-insulator (GeOI) are the most promising materials for the next-generation nanoelectronics that can be fully integrated with silicon technology. To this day, the fabrication of Ge-based transistors with a n-type channel doping above 5 × 1019 cm−3 remains challenging. Here, we report on n-type doping of Ge beyond the equilibrium solubility limit (ne ≈ 6 × 1020 cm−3) together with a nanoscale technique to inspect the dopant distribution in n++-p junctions in GeOI. The n++ layer in Ge is realized by P+ ion implantation followed by millisecond-flashlamp annealing. The electron concentration is found to be three times higher than the equilibrium solid solubility limit of P in Ge determined at 800 °C. The millisecond-flashlamp annealing process is used for the electrical activation of the implanted P dopant and to fully suppress its diffusion. The study of the P activation and distribution in implanted GeOI relies on the combination of Raman spectroscopy, conductive atomic force microscopy, and secondary ion mass spectrometry. The linear dependence between the Fano asymmetry parameter q and the active carrier concentration makes Raman spectroscopy a powerful tool to study the electrical properties of semiconductors. We also demonstrate the high electrical activation efficiency together with the formation of ohmic contacts through Ni germanidation via a single-step flashlamp annealing process. | en_US |
dc.language | EN | |
dc.title | Nanoscale n(++)-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy | en_US |
dc.type | Journal article | en_US |
dc.creator.author | Prucnal, Slawomir | |
dc.creator.author | Berencen, Yonder | |
dc.creator.author | Wang, Mao | |
dc.creator.author | Georgiev, Yordan Nikolaev | |
dc.creator.author | Erbe, Artur | |
dc.creator.author | Khan, MB | |
dc.creator.author | Boettger, Roman | |
dc.creator.author | Hübner, Renè | |
dc.creator.author | Schoenherr, Tommy | |
dc.creator.author | Kalbacova, Jana | |
dc.creator.author | Vines, Lasse | |
dc.creator.author | Facsko, Stefan | |
dc.creator.author | Engler, Martin | |
dc.creator.author | Zahn, D. R. T. | |
dc.creator.author | Knoch, Joachim | |
dc.creator.author | Helm, Manfred | |
dc.creator.author | Skorupa, Wolfgang | |
dc.creator.author | Zhou, Shengqiang | |
cristin.unitcode | 185,15,17,0 | |
cristin.unitname | Senter for materialvitenskap og nanoteknologi | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.cristin | 1760389 | |
dc.identifier.bibliographiccitation | info:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Applied Physics&rft.volume=125&rft.spage=&rft.date=2019 | |
dc.identifier.jtitle | Journal of Applied Physics | |
dc.identifier.volume | 125 | |
dc.identifier.issue | 24 | |
dc.identifier.doi | https://doi.org/10.1063/1.5080289 | |
dc.identifier.urn | URN:NBN:no-79058 | |
dc.type.document | Tidsskriftartikkel | en_US |
dc.type.peerreviewed | Peer reviewed | |
dc.source.issn | 0021-8979 | |
dc.identifier.fulltext | Fulltext https://www.duo.uio.no/bitstream/handle/10852/75989/1/1.5080289.pdf | |
dc.type.version | PublishedVersion | |
cristin.articleid | 245703 | |
dc.relation.project | NFR/255082 | |