• English
    • Norsk
  • English 
    • English
    • Norsk
  • Administration
View Item 
  •   Home
  • Øvrige samlinger
  • Høstingsarkiver
  • CRIStin høstingsarkiv
  • View Item
  •   Home
  • Øvrige samlinger
  • Høstingsarkiver
  • CRIStin høstingsarkiv
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms-Range Flash Lamp Annealing

Duan, Juanmei; Wang, Mao; Vines, Lasse; Bottger, Roman; Helm, Manfred; Zeng, Yu-Jia; Zhou, Shengqiang; Prucnal, Slawomir
Journal article; SubmittedVersion
View/Open
manuscript.pdf (1.124Mb)
Year
2019
Permanent link
http://urn.nb.no/URN:NBN:no-77447

CRIStin
1697912

Metadata
Show metadata
Appears in the following Collection
  • Fysisk institutt [2257]
  • Det matematisk-naturvitenskapelige fakultet [246]
  • CRIStin høstingsarkiv [15063]
Original version
Physica Status Solidi (a) applications and materials science. 2019, 216 (8):1800618, DOI: https://doi.org/10.1002/pssa.201800618
Abstract
With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integration of high mobility semiconductors, such as III–V compound semiconductors, with complementary metal‐oxide‐semiconductor (CMOS) technology. In this study, the formation of shallow n–p and p–n junctions in GaAs utilizing ion implantation of S and Zn, respectively, followed by millisecond‐range flash lamp annealing (FLA) is presented. The distribution of implanted elements obtained by secondary ion mass spectrometry (SIMS) shows that the FLA process can effectively suppress the diffusion of dopants. Simultaneously, the ms‐range annealing is sufficient to recrystallize the implanted layer and to activate the dopants. Formation of p–n and n–p junctions is confirmed by current–voltage characteristics. The ratio of reverse to forward current can reach up to 1.7 × 107 in the n‐GaAs:Zn case.
 
With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integration of high mobility semiconductors, such as III–V compound semiconductors, with complementary metal‐oxide‐semiconductor (CMOS) technology. In this study, the formation of shallow n–p and p–n junctions in GaAs utilizing ion implantation of S and Zn, respectively, followed by millisecond‐range flash lamp annealing (FLA) is presented. The distribution of implanted elements obtained by secondary ion mass spectrometry (SIMS) shows that the FLA process can effectively suppress the diffusion of dopants. Simultaneously, the ms‐range annealing is sufficient to recrystallize the implanted layer and to activate the dopants. Formation of p–n and n–p junctions is confirmed by current–voltage characteristics. The ratio of reverse to forward current can reach up to 1.7 × 107 in the n‐GaAs:Zn case.
 
Responsible for this website 
University of Oslo Library


Contact Us 
duo-hjelp@ub.uio.no


Privacy policy
 

 

For students / employeesSubmit master thesisAccess to restricted material

Browse

All of DUOCommunities & CollectionsBy Issue DateAuthorsTitlesThis CollectionBy Issue DateAuthorsTitles

For library staff

Login
RSS Feeds
 
Responsible for this website 
University of Oslo Library


Contact Us 
duo-hjelp@ub.uio.no


Privacy policy