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Carbon vacancy engineering in p+n 4H-SiC diodes by thermal processing

dc.contributor.authorKvamsdal, Kjell-Erik
dc.date.accessioned2019-07-16T23:45:41Z
dc.date.available2019-07-16T23:45:41Z
dc.date.issued2019
dc.identifier.citationKvamsdal, Kjell-Erik. Carbon vacancy engineering in p+n 4H-SiC diodes by thermal processing. Master thesis, University of Oslo, 2019
dc.identifier.urihttp://hdl.handle.net/10852/68693
dc.description.abstracteng
dc.language.isoeng
dc.subjectSilicon Carbide
dc.subjectSiC
dc.subjectCarbon vacancy
dc.subjectJunctions
dc.titleCarbon vacancy engineering in p+n 4H-SiC diodes by thermal processingeng
dc.typeMaster thesis
dc.date.updated2019-07-16T23:45:40Z
dc.creator.authorKvamsdal, Kjell-Erik
dc.identifier.urnURN:NBN:no-71847
dc.type.documentMasteroppgave
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/68693/5/Master_Thesis_Final_KEK_09_04.pdf


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