Impurity Diffusion in Single Crystal Zinc Oxide
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- Fysisk institutt [2520]
Abstract
No abstract.List of papers
| Paper I: T. N. Sky, K. M. Johansen, H. N. Riise, B. G. Svensson, and L. Vines. Gallium diffusion in zinc oxide via the paired dopant-vacancy mechanism. Journal of Applied Physics 123, 055701 (2018). DOI: 10.1063/1.5000123. The paper is included in the thesis. Also available in DUO at: http://urn.nb.no/URN:NBN:no-68232 |
| Paper II: T. N. Sky, K. M. Johansen, V. Venkatachalapathy, B. G. Svensson, F. Tuomisto and L. Vines. Influence of Fermi-level position on Vacancy-Assisted Diffusion of Aluminum in Zinc Oxide. Physical Review B 98, 245204 (2018). DOI: 10.1103/PhysRevB.98.245204. The article is included in the thesis. Also available at: https://doi.org/10.1103/PhysRevB.98.245204 |
| Paper III: T. N. Sky, K. M. Johansen, Y. K. Frodason, H. N. Riise, B. G. Svensson, and L. Vines. Diffusion of Indium in Single Crystal Zinc Oxide: a Comparison between Group III Donors. Semicond. Sci. Technol. 34, 025011 (2019). DOI: 10.1088/1361-6641/aafa4c. The paper is not available in DUO due to publisher restrictions. The published version is available at: https://doi.org/10.1088/1361-6641/aafa4c |
| Paper IV: T. N. Sky, K. M. Johansen, Y. K. Frodason, B. G. Svensson, and L. Vines. The Interaction between Lithium Acceptors and Gallium Donors in Zinc Oxide. J. Appl. Phys. 124, 245702 (2018). DOI: 10.1063/1.5063326. The article is included in the thesis. Also available at: https://doi.org/10.1063/1.5063326 |
| Paper V: H. N. Riise, V. S. Olsen, A. Azarov, A. Galeckas, T. N. Sky, B. G. Svensson, and E. Monakhov, Local homoepitaxy of zinc oxide thin films by magnetron sputtering. Thin Solid Films, 601 (2016). DOI: 10.1016/j.tsf.2015.09.043. The article is included in the thesis. Also available at: https://doi.org/10.1016/j.tsf.2015.09.043 |