Hide metadata

dc.date.accessioned2019-03-12T09:42:18Z
dc.date.available2019-03-12T09:42:18Z
dc.date.created2019-01-31T19:07:52Z
dc.date.issued2018
dc.identifier.citationLuo, Caiqin Ho, Lok-Ping Azad, Fahad Anwand, Wolfgang Butterling, Maik Wagner, Andreas Kuznetsov, Andrej Zhu, Hai Su, Shichen Ling, Francis Chi-Chung . Sb-related defects in Sb-doped ZnO thin film grown by pulsed laser deposition. Journal of Applied Physics. 2018, 123(16), 1-12
dc.identifier.urihttp://hdl.handle.net/10852/67133
dc.description.abstractSb-doped ZnO films were fabricated on c-plane sapphire using the pulsed laser deposition method and characterized by Hall effect measurement, X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and positron annihilation spectroscopy. Systematic studies on the growth conditions with different Sb composition, oxygen pressure, and post-growth annealing were conducted. If the Sb doping concentration is lower than the threshold ∼8 × 1020 cm−3, the as-grown films grown with an appropriate oxygen pressure could be n∼4 × 1020 cm−3. The shallow donor was attributed to the SbZn related defect. Annealing these samples led to the formation of the SbZn-2VZn shallow acceptor which subsequently compensated for the free carrier. For samples with Sb concentration exceeding the threshold, the yielded as-grown samples were highly resistive. X-ray diffraction results showed that the Sb dopant occupied the O site rather than the Zn site as the Sb doping exceeded the threshold, whereas the SbO related deep acceptor was responsible for the high resistivity of the samples.en_US
dc.languageEN
dc.publisherAmerican Institute of Physics (AIP)
dc.titleSb-related defects in Sb-doped ZnO thin film grown by pulsed laser depositionen_US
dc.typeJournal articleen_US
dc.creator.authorLuo, Caiqin
dc.creator.authorHo, Lok-Ping
dc.creator.authorAzad, Fahad
dc.creator.authorAnwand, Wolfgang
dc.creator.authorButterling, Maik
dc.creator.authorWagner, Andreas
dc.creator.authorKuznetsov, Andrej
dc.creator.authorZhu, Hai
dc.creator.authorSu, Shichen
dc.creator.authorLing, Francis Chi-Chung
cristin.unitcode185,15,4,90
cristin.unitnameHalvlederfysikk
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1
dc.identifier.cristin1671357
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Applied Physics&rft.volume=123&rft.spage=1&rft.date=2018
dc.identifier.jtitleJournal of Applied Physics
dc.identifier.volume123
dc.identifier.issue16
dc.identifier.startpage1
dc.identifier.endpage12
dc.identifier.doihttp://dx.doi.org/10.1063/1.4997510
dc.identifier.urnURN:NBN:no-70302
dc.type.documentTidsskriftartikkelen_US
dc.type.peerreviewedPeer reviewed
dc.source.issn0021-8979
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/67133/1/1.4997510.pdf
dc.type.versionPublishedVersion
cristin.articleid161525


Files in this item

Appears in the following Collection

Hide metadata