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dc.date.accessioned2018-09-11T12:17:05Z
dc.date.available2019-07-03T22:46:51Z
dc.date.created2018-09-08T13:37:08Z
dc.date.issued2018
dc.identifier.citationJensen, Ingvild Julie Thue Johansen, Klaus Magnus H Zhan, Wei Venkatachalapathy, Vishnukanthan Brillson, Len Kuznetsov, Andrej Prytz, Øystein . Bandgap and band edge positions in compositionally graded ZnCdO. Journal of Applied Physics. 2018, 124
dc.identifier.urihttp://hdl.handle.net/10852/64621
dc.description.abstractIntroducing Cd into ZnO allows for bandgap engineering, potentially with particularly interesting properties to observe in compositionally graded samples. In this work, compositionally graded Zn1–xCdxO samples with 0 ≤ x < 0.16 were made using metal organic vapour phase epitaxy. The chemical composition was studied using scanning transmission electron microscopy, while the band structure of the samples was investigated using a combination of cathodoluminescence spectroscopy and X-ray photoelectron spectroscopy (XPS). It is found that the reduction of the bandgap in our samples is caused by changes in the conduction band. The position of the Fermi level relative to the vacuum level, i.e., the workfunction, was also found to change upon addition of Cd, giving an apparent shift in the valence band when evaluated from the XPS valence spectra. © 2018 AIP Publishingen_US
dc.languageEN
dc.publisherAmerican Institute of Physics (AIP)
dc.titleBandgap and band edge positions in compositionally graded ZnCdOen_US
dc.title.alternativeENEngelskEnglishBandgap and band edge positions in compositionally graded ZnCdO
dc.typeJournal articleen_US
dc.creator.authorJensen, Ingvild Julie Thue
dc.creator.authorJohansen, Klaus Magnus H
dc.creator.authorZhan, Wei
dc.creator.authorVenkatachalapathy, Vishnukanthan
dc.creator.authorBrillson, Len
dc.creator.authorKuznetsov, Andrej
dc.creator.authorPrytz, Øystein
cristin.unitcode185,15,4,40
cristin.unitnameStrukturfysikk
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1
dc.identifier.cristin1607807
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Applied Physics&rft.volume=124&rft.spage=&rft.date=2018
dc.identifier.jtitleJournal of Applied Physics
dc.identifier.volume124
dc.identifier.doihttp://dx.doi.org/10.1063/1.5036710
dc.identifier.urnURN:NBN:no-67153
dc.type.documentTidsskriftartikkelen_US
dc.type.peerreviewedPeer reviewed
dc.source.issn0021-8979
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/64621/2/jensen-JAP-2018.pdf
dc.type.versionPublishedVersion
cristin.articleid015302
dc.relation.projectNORTEM/197405
dc.relation.projectNFR/255082
dc.relation.projectNFR/228578
dc.relation.projectNFR/221992


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