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dc.date.accessioned2018-08-23T13:17:25Z
dc.date.available2018-08-23T13:17:25Z
dc.date.created2017-06-26T15:23:10Z
dc.date.issued2016
dc.identifier.citationSchifano, Ramon Riise, Heine Nygard Domagala, J. Azarov, Alexander Ratajczak, R. Monakhov, Edouard Venkatachalapathy, Vishnukanthan Vines, Lasse Chan, K. S. Wong-Leung, J. Svensson, Bengt Gunnar . Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering. Journal of Applied Physics. 2017, 121(1)
dc.identifier.urihttp://hdl.handle.net/10852/63666
dc.description.abstractHomoepitaxial ZnO growth is demonstrated from conventional RF-sputtering at 400 °C on both Zn and O polar faces of hydrothermally grown ZnO substrates. A minimum yield for the Rutherford backscattering and channeling spectrum, χmin, equal to ∼3% and ∼12% and a full width at half maximum of the 00.2 diffraction peak rocking curve of (70 ± 10) arc sec and (1400 ± 100) arc sec have been found for samples grown on the Zn and O face, respectively. The structural characteristics of the film deposited on the Zn face are comparable with those of epilayers grown by more complex techniques like molecular beam epitaxy. In contrast, the film simultaneously deposited on the O-face exhibits an inferior crystalline structure ∼0.7% strained in the c-direction and a higher atomic number contrast compared with the substrate, as revealed by high angle annular dark field imaging measurements. These differences between the Zn- and O-face films are discussed in detail and associated with the different growth mechanisms prevailing on the two surfaces. © 2016 AIP Publishingen_US
dc.languageEN
dc.publisherAmerican Institute of Physics (AIP)
dc.titleComparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputteringen_US
dc.typeJournal articleen_US
dc.creator.authorSchifano, Ramon
dc.creator.authorRiise, Heine Nygard
dc.creator.authorDomagala, J.
dc.creator.authorAzarov, Alexander
dc.creator.authorRatajczak, R.
dc.creator.authorMonakhov, Edouard
dc.creator.authorVenkatachalapathy, Vishnukanthan
dc.creator.authorVines, Lasse
dc.creator.authorChan, K. S.
dc.creator.authorWong-Leung, J.
dc.creator.authorSvensson, Bengt Gunnar
cristin.unitcode185,15,17,20
cristin.unitnameSenter for Materialvitenskap og Nanoteknologi fysikk
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1
dc.identifier.cristin1478966
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Applied Physics&rft.volume=121&rft.spage=&rft.date=2017
dc.identifier.jtitleJournal of Applied Physics
dc.identifier.volume121
dc.identifier.issue1
dc.identifier.doihttp://dx.doi.org/10.1063/1.4973342
dc.identifier.urnURN:NBN:no-66217
dc.type.documentTidsskriftartikkelen_US
dc.type.peerreviewedPeer reviewed
dc.source.issn0021-8979
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/63666/4/1.4973342.pdf
dc.type.versionPublishedVersion
dc.relation.projectNFR/245963
dc.relation.projectNFR/193829


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