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Luminescent YbVO4 by atomic layer deposition

Getz, Michael; Hansen, Per-Anders; Ahmed, Mohammed Amin Karim; Fjellvåg, Helmer; Nilsen, Ola
Journal article; AcceptedVersion; Peer reviewed
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Year
2017
Permanent link
http://urn.nb.no/URN:NBN:no-63985

CRIStin
1480922

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  • Kjemisk institutt [825]
  • CRIStin høstingsarkiv [15034]
Original version
Dalton Transactions. 2017, 46 (9), 3008-3013, DOI: http://dx.doi.org/10.1039/c7dt00253j
Abstract
UV to visible and near-infrared converting thin films of YbVO4 have been deposited by atomic layer deposition, using the precursor combinations Yb(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and O3, and VO(thd)2 and O3 at a deposition temperature of 240 °C, followed by post deposition annealing at 400–1000 °C. The UV absorption and the visible and near-infrared emission have been investigated in detail. The structure, thickness and composition of the deposited films have been studied by X-ray diffraction, ellipsometry, and X-ray fluorescence, respectively. The optimal pulse ratio of Yb(thd)3 and VO(thd)2 with respect to near-infrared emission was found to be 1 : 3, which also yielded the most crystalline sample after annealing. Crystallization of the films is accelerated when an excess of V2O5 is present, enabling crystallization at temperatures as low as 500 °C, probably through a flux aided process.
 
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