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Defect formation and thermal stability of H in high dose H implanted ZnO

Chan, K.-S.; Vines, Lasse; Johansen, Klaus Magnus H; Monakhov, Edouard; Ye, J.D; Parkinson, P; Jagadish, C; Svensson, Bengt Gunnar; Wong-Leung, J
Journal article; PublishedVersion; Peer reviewed
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1%252E4819216.pdf (1.599Mb)
Year
2013
Permanent link
http://urn.nb.no/URN:NBN:no-59812

CRIStin
1052425

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  • Det matematisk-naturvitenskapelige fakultet [343]
  • CRIStin høstingsarkiv [17026]
Original version
Journal of Applied Physics. 2013, 114 (8):083111, DOI: http://dx.doi.org/10.1063/1.4819216
Abstract
We studied the structural properties, defect formation, and thermal stability of H in hydrothermally grown ZnO single crystals implanted with H- dose ranging from 2.5×1016 to 1×1017 cm−2. H implantation is found to create deformed layers with a uniaxial strain of 0.5–2.4% along the c-axis in ZnO, for the low and high dose, respectively. About 0.2–0.4% of the original implanted H concentration can still be detected in the samples by secondary ion mass spectrometry after annealing at a temperature up to 800 °C. The thermally stable H is tentatively attributed to H related defect complexes involving the substitutional H that are bound to O vacancies and/or the highly mobile interstitial H that are bound to substitutional Li occupying Zn vacancies as the samples are cooled slowly from high temperature annealing. H implantation to a dose of 1×1017 cm−2 and followed by annealing at 800 °C, is found to result in the formation of vacancy clusters that evolved into faceted voids with diameter varying from 2 to 30 nm. The truncations around the voids form more favorably on the O-terminated surface than on the Zn-terminated surface, suggesting that O is a preferred surface polarity for the internal facets of the voids in the presence of H.

This research was originally published in the Journal of Applied Physics. © AIP Publishing
 
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