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dc.date.accessioned2017-08-16T14:27:23Z
dc.date.available2017-08-16T14:27:23Z
dc.date.created2014-09-22T14:41:20Z
dc.date.issued2014
dc.identifier.citationStehr, J. E. Johansen, Klaus Magnus H Bjørheim, Tor Svendsen Vines, Lasse Svensson, Bengt Gunnar Chen, W. M. Buyanova, I. A. . Zinc-Vacancy–Donor Complex: A Crucial Compensating Acceptor in ZnO. Physical Review Applied. 2014, 2(2), 021001
dc.identifier.urihttp://hdl.handle.net/10852/57112
dc.description.abstractThe aluminum–zinc-vacancy (AlZn−VZn) complex is identified as one of the dominant defects in Al-containing n-type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically favorable over the isolated VZn, binding more than 90% of the stable VZn’s generated by the irradiation. It acts as a deep acceptor with the (0/−) energy level located at approximately 1 eV above the valence band. Such a complex is concluded to be a defect of crucial and general importance that limits the n-type doping efficiency by complex formation with donors, thereby literally removing the donors, as well as by charge compensation. © 2014 American Physical Societyen_US
dc.languageEN
dc.publisherAmerican Physical Society
dc.titleZinc-Vacancy–Donor Complex: A Crucial Compensating Acceptor in ZnOen_US
dc.typeJournal articleen_US
dc.creator.authorStehr, J. E.
dc.creator.authorJohansen, Klaus Magnus H
dc.creator.authorBjørheim, Tor Svendsen
dc.creator.authorVines, Lasse
dc.creator.authorSvensson, Bengt Gunnar
dc.creator.authorChen, W. M.
dc.creator.authorBuyanova, I. A.
cristin.unitcode185,15,4,90
cristin.unitnameHalvlederfysikk
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1
dc.identifier.cristin1156724
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Physical Review Applied&rft.volume=2&rft.spage=021001&rft.date=2014
dc.identifier.jtitlePhysical Review Applied
dc.identifier.volume2
dc.identifier.issue2
dc.identifier.startpage021001
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevApplied.2.021001
dc.identifier.urnURN:NBN:no-59820
dc.type.documentTidsskriftartikkelen_US
dc.type.peerreviewedPeer reviewed
dc.source.issn2331-7019
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/57112/1/PhysRevApplied.2.021001.pdf
dc.type.versionPublishedVersion


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