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Vacancy defect and defect cluster energetics in ion-implanted ZnO

Dong, Yufeng; Tuomisto, F; Svensson, Bengt Gunnar; Kuznetsov, Andrej; Brillson, Leonard J.
Journal article; PublishedVersion; Peer reviewed
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PhysRevB.81.081201.pdf (458.2Kb)
Year
2010
Permanent link
http://urn.nb.no/URN:NBN:no-59827

CRIStin
350165

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  • Det matematisk-naturvitenskapelige fakultet [332]
  • CRIStin høstingsarkiv [16854]
Original version
Physical Review B. Condensed Matter and Materials Physics. 2010, 81 (8), DOI: http://dx.doi.org/10.1103/PhysRevB.81.081201
Abstract
We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation.

© 2010 American Physical Society
 
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