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dc.date.accessioned2017-01-31T10:05:14Z
dc.date.available2017-05-12T22:31:33Z
dc.date.created2016-05-13T08:40:03Z
dc.date.issued2016
dc.identifier.citationLindberg, Per Filip Lipp Bregolin, Felipe Wiesenhütter, Katarzyna Wiesenhütter, Ulrich Riise, Heine Nygard Vines, Lasse Prucnal, Slawomir Skorupa, Wolfgang Svensson, Bengt Gunnar Monakhov, Edouard . The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures.. Journal of Applied Physics. 2016, 119(18)
dc.identifier.urihttp://hdl.handle.net/10852/53660
dc.description.abstractThe effect of millisecond flash lamp annealing (FLA) on aluminumdopedZnO (AZO) films and their interface with Si have been studied. The AZO films were deposited by magnetron sputtering on Si (100) substrates. The electrical and structural properties of the film and AZO/Si structures were characterized by current–voltage, capacitance–voltage, and deep level transient spectroscopy measurements, X-ray diffraction, and secondary ion mass spectrometry. The resistivity of the AZO film is reduced to a close to state-of-the-art value of 2 × 10−4 Ω cm after FLA for 3 ms with an average energy density of 29 J/cm2. In addition, most of the interfacial defects energy levels are simultaneously annealed out, except for one persisting shallow level, tentatively assigned to the vacancy-oxygen complex in Si, which was not affected by FLA. Subsequent to the FLA, the samples were treated in N2 or forming gas (FG) (N2/H2, 90/10%mole) ambient at 200–500 °C. The latter samples maintained the low resistivity achieved after the FLA, but not the former ones. The interfacial defect level persisting after the FLA is removed by the FG treatment, concurrently as another level emerges at ∼0.18 eV below the conduction band. The electrical data of the AZO films are discussed in term of point defects controlling the resistivity, and it is argued that the FLA promotes formation of electrically neutral clusters of Zink vacancies (VZn's) rather than passivating/compensating complexes between the Al donors and VZn's. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.en_US
dc.languageEN
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics (AIP)
dc.titleThe effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures.en_US
dc.typeJournal articleen_US
dc.creator.authorLindberg, Per Filip
dc.creator.authorLipp Bregolin, Felipe
dc.creator.authorWiesenhütter, Katarzyna
dc.creator.authorWiesenhütter, Ulrich
dc.creator.authorRiise, Heine Nygard
dc.creator.authorVines, Lasse
dc.creator.authorPrucnal, Slawomir
dc.creator.authorSkorupa, Wolfgang
dc.creator.authorSvensson, Bengt Gunnar
dc.creator.authorMonakhov, Edouard
cristin.unitcode185,15,17,0
cristin.unitnameSenter for materialvitenskap og nanoteknologi
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode2
dc.identifier.cristin1355473
dc.identifier.bibliographiccitationinfo:ofi/fmt:kev:mtx:ctx&ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal of Applied Physics&rft.volume=119&rft.spage=&rft.date=2016
dc.identifier.jtitleJournal of Applied Physics
dc.identifier.volume119
dc.identifier.issue18
dc.identifier.doihttp://dx.doi.org/10.1063/1.4948666
dc.identifier.urnURN:NBN:no-56827
dc.type.documentTidsskriftartikkelen_US
dc.type.peerreviewedPeer reviewed
dc.source.issn0021-8979
dc.identifier.fulltextFulltext https://www.duo.uio.no/bitstream/handle/10852/53660/1/1.4948666.pdf
dc.type.versionPublishedVersion
cristin.articleid185305


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