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(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
The optical properties of single ion tracks have been studied in ZnO implanted with Ge by combining depth-resolved hyperspectral cathodoluminescence (CL) and photoluminescence (PL) spectroscopy techniques. The results ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
Direct evidence of the formation of nitrogen molecules (N2) after ion implantion of ZnO has been revealed by an atomically resolved scanning transmission electron microscopy (STEM)–electron energy-loss spectroscopy (EELS) ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2018)
The influence of Fermi level position and annealing ambient on the zinc vacancy VZn generation and Al diffusion is studied in monocrystalline zinc oxide (ZnO). From secondary-ion mass spectrometry and positron annihilation ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2014)
The aluminum–zinc-vacancy (AlZn−VZn) complex is identified as one of the dominant defects in Al-containing n-type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2013)
We studied the structural properties, defect formation, and thermal stability of H in hydrothermally grown ZnO single crystals implanted with H- dose ranging from 2.5×1016 to 1×1017 cm−2. H implantation is found to create ...