We have used a combination of optical absorption and electrical conductivity measurements to study the effect of the main donor on small polarons in rutile TiO2 single crystals rendered n-type conductive by hydrogenation ...

Deep-level transient spectroscopy measurements are conducted onβ-Ga2O3thin-filmsimplanted with helium and hydrogen (H) to study the formation of the defect levelE∗2(EA=0.71 eV) during heat treatments under an applied ...

The silicon vacancy (VSi) in 4H-SiC is a room temperature single-photon emitter with a controllable high-spin ground state and is a promising candidate for future quantum technologies. However, controlled defect formation ...

Deep-level transient spectroscopy measurements are conducted on β-Ga2O3 thin-films implanted with helium and hydrogen (H) to study the formation of the defect level E2 lowast (EA = 0.71 eV) during heat treatments under an ...

Self-diffusion of carbon (12C and 13C) and silicon (28Si and 30Si) in 4H silicon carbide has been investigated by utilizing a structure containing an isotope purified 4H-28Si12C epitaxial layer grown on an n-type (0001) ...

Point defects in solids are promising single-photon sources with application in quantum sensing, computing and communication. Herein, we describe a theoretical framework for studying electric field effects on defect-related ...

The effect of lattice anisotropy on the diffusion of hydrogen (H)/deuterium (2H) in β-Ga2O3 was investigated using secondary ion mass spectrometry (SIMS) and hybrid-functional calculations. Concentration-depth profiles of ...

Direct evidence of N2 formation after annealing of (ZnO)1−x(GaN)x alloys was revealed. N2 was trapped by VZn+Ga-clusters, forming faceted voids along grain boundaries. This study shows that N–N bonding is a competitive ...

The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence spectroscopy. A comprehensive ...

Deep-level transient spectroscopy measurements on β-Ga2O3 crystals reveal the presence of three defect signatures labeled E2a, E2b, and E3 with activation energies at around 0.66 eV, 0.73 eV, and 0.95 eV below the conduction ...

Cu2ZnSn(S,Se)4 is a promising nontoxic earth‐abundant solar cell absorber. To optimize the thin films for solar cell device performance, postdeposition treatments at temperatures below the crystallization temperature are ...

Channeling phenomena during ion implantation have been studied for 50 keV 11 B, 100 keV 27 Al and 240 keV 71 Ga in 4H-SiC by secondary ion mass spectrometry and medium energy ion backscattering. The same projected range ...

A steady-state photocapacitance (SSPC) setup directly connected to the beamline of a MeV ion implanter is utilized to study primary intrinsic defects in β–Ga2O3 generated by He implantation at cryogenic temperatures (120 ...

Making a systematic effort, we have developed single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 °C by co-sputtering from metal targets in a nitrogen atmosphere, ...

The implantation of aluminum into 4H-SiC is studied using secondary ion mass spectrometry. In particular, two-dimensional concentration profiles are obtained, which allow the investigation of lateral straggling and its ...

Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, ...

Heterojunction Cu2O solar cells are an important class of Earth-abundant photovoltaics that can be synthesized by a variety of techniques, including electrochemical deposition (ECD) and thermal oxidation (TO). The latter ...

Low-energy muon-spin-rotation spectroscopy (LE-μSR) is employed to study silicon and carbon vacancies in proton-irradiated 4H-SiC. We show that the implanted muon is quickly attracted to the negative Si vacancy (VSi), where ...

This work explores the luminescence properties of self-trapped holes and impurity-related acceptors using one-dimensional configuration coordinate diagrams derived from hybrid functional calculations. The photoluminescence ...

The optical properties of single ion tracks have been studied in ZnO implanted with Ge by combining depth-resolved hyperspectral cathodoluminescence (CL) and photoluminescence (PL) spectroscopy techniques. The results ...

The evolution of electrical resistance as function of defect concentration is examined for the unipolar n-conducting oxides CdO, β-Ga2O3, In2O3, SnO2 and ZnO in order to explore the predictions of the amphoteric defect ...