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Now showing items 1-9 of 9
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2021)
Positron annihilation spectroscopy, Fourier transform-infrared absorption spectroscopy, and secondary ion mass spectrometry have been used to study the behavior of gallium vacancy-related defects and hydrogen in deuterium ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2021)
This work systematically explores 19 unique configurations of the close-associate Ga–O divacancies (VGaVO) in β−Ga2O3, including their complexes with H impurities, using hybrid functional calculations. Interestingly, most ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2021)
Silicon (Si) is an efficient n-type dopant in gallium oxide (Ga2O3)—an ultra-wide bandgap semiconductor promising in a number of applications. However, in spite of the technological importance for device fabrication, the ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2021)
Abstract Conductive rutile TiO 2 has received considerable attention recently due to multiple applications. However, the permittivity in conductive, reduced or doped TiO 2 appears to cause controversy with reported values ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2021)
Semiconductor nanocrystals are often proposed as a viable route to improve solar energy conversion in photovoltaics and photoelectrochemical systems. Embedding the nanocrystals in, e.g. a transparent and conducting electrode ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2021)
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2021)
Point defects in semiconductors are promising single-photon emitters (SPEs) for quantum computing, communication, and sensing applications. However, factors such as emission brightness, purity. and indistinguishability are ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2021)
Fermi level controlled point defect balance is demonstrated in ion irradiated indium oxide (In2O3). Specifically, our observations can be sub-divided into the formation of isolated Frenkel pairs and secondary defects, ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2021)
Point defects in semiconductors are emerging as an important contender platform for quantum technology (QT) applications, showing potential for quantum computing, communication, and sensing. Indeed, point defects have been ...