Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, ...

Direct evidence of N2 formation after annealing of (ZnO)1−x(GaN)x alloys was revealed. N2 was trapped by VZn+Ga-clusters, forming faceted voids along grain boundaries. This study shows that N–N bonding is a competitive ...

Making a systematic effort, we have developed single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 °C by co-sputtering from metal targets in a nitrogen atmosphere, ...

The evolution of electrical resistance as function of defect concentration is examined for the unipolar n-conducting oxides CdO, β-Ga2O3, In2O3, SnO2 and ZnO in order to explore the predictions of the amphoteric defect ...

Single crystalline bulk and epitaxially grown gallium oxide (β–Ga2O3) was irradiated by 0.6 and 1.9 MeV protons to doses ranging from 5 × 109 to 6 × 1014 cm−2 in order to study the impact on charge carrier concentration ...

Direct evidence of the formation of nitrogen molecules (N2) after ion implantion of ZnO has been revealed by an atomically resolved scanning transmission electron microscopy (STEM)–electron energy-loss spectroscopy (EELS) ...

The structural and optical properties of magnetron sputtered thin films of (ZnO)1−x(GaN)x deposited on zinc oxide, sapphire, and silicon oxide are studied as a function of strain accumulation and post‐deposition anneals ...

It is known that the behavior of residual Li in ion implanted ZnO depends on the preferential localization of the implants, in particular, forming characteristic Li depleted or Li pile-up regions for Zn or O sublattice ...