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(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
Abstract Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2023)
Gallium oxide (Ga2O3) exhibits complex behavior under ion irradiation since ion-induced disorder affects not only the functional properties but can provoke polymorphic transformations in Ga2O3. A conventional way used to ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2023)
In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an interplay between donor-like hydrogen configurations ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2023)
Ion beam fabrication of metastable polymorphs of Ga2O3, assisted by the controllable accumulation of the disorder in the lattice, is an interesting alternative to conventional deposition techniques. However, the adjustability ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2023)
Migration properties of the intrinsic defects were investigated in α-Ga2O3 by controllable introduction of the lattice disorder with ion irradiation and monitoring its evolution as a function of ion dose, flux, and ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2023)
Abstract
Ion implantation is an excellent method to introduce defects into semiconductors, extending their functionalities in a controllable way. Herein, we investigated an option to use crystallographically ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2023)
Defects created in lightly Sn-doped (2 × 1016 cm−3) (010)-oriented bulk β-Ga2O3 implanted with 1.2 MeV, 3 × 1015 cm−2 197Au+ ions before and after treatment in hydrogen plasmas at 330 °C were studied by X-ray measurements, ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2022)
Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (β-Ga 2 O 3 ) wafers, having [Formula: see text], (010), and (001) orientations, were studied by Rutherford backscattering spectrometry ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2022)
olymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure and strain can also be induced by the gradually accumulated radiation disorder. However, in semiconductors, the ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2022)
Abstract Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga 2 O 3 ) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2021)
Silicon (Si) is an efficient n-type dopant in gallium oxide (Ga2O3)—an ultra-wide bandgap semiconductor promising in a number of applications. However, in spite of the technological importance for device fabrication, the ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2021)
Ion bombardment provides an opportunity to study basic properties of intrinsic defects in materials since the radiation-induced disorder accumulation depends on the balance between defect generation and migration rates. ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2020)
Bombardment of ZnO with heavy ions generating dense collision cascades is of particular interest because of the formation of nontrivial damage distribution involving a defected layer located between the surface and the ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2020)
Spectroscopic identification of defects and impurities is crucial for understanding doping asymmetry issues in ZnO and, therefore, realization of true ZnO-based bipolar devices. Chlorine (Cl) is an amphoteric impurity in ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
Zn interstitial (Zni) is one of the fundamental intrinsic defects in ZnO and prominently affects the physical properties of the material. Here, the energetics and migration properties of Zni have been studied in ion implanted ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
Direct evidence of the formation of nitrogen molecules (N2) after ion implantion of ZnO has been revealed by an atomically resolved scanning transmission electron microscopy (STEM)–electron energy-loss spectroscopy (EELS) ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
The structural and optical properties of magnetron sputtered thin films of (ZnO)1−x(GaN)x deposited on zinc oxide, sapphire, and silicon oxide are studied as a function of strain accumulation and post‐deposition anneals ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
It is known that the behavior of residual Li in ion implanted ZnO depends on the preferential localization of the implants, in particular, forming characteristic Li depleted or Li pile-up regions for Zn or O sublattice ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
Several fundamental aspects of the oxidation-induced redistribution of Ge in thin films of SiGe are studied. This includes the incorporation of Ge into the oxide and the formation of what is alternatively referred to as ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2011)
Thermal stability of originally single crystalline wurtzite MgxZn1−xO (x ⩽ 0.3) films implanted at room temperature with 166Er ions is studied by a combination of Rutherford backscattering spectrometry, time-of-flight ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2011)
A phenomenon of wurtzite (w), zincblende (zb), and rock-salt (rs) phase separation was investigated in ZnCdO films having Cd contents in the range of 0%–60% settling a discussion on the phase stability issues in ZnCdO. ...