We investigate the migration mechanism of the carbon vacancy (VC) in silicon carbide (SiC) using a combination of theoretical and experimental methodologies. The VC, commonly present even in state-of-the-art epitaxial SiC ...

Direct evidence of the formation of nitrogen molecules (N2) after ion implantion of ZnO has been revealed by an atomically resolved scanning transmission electron microscopy (STEM)–electron energy-loss spectroscopy (EELS) ...

We report on a deep level transient spectroscopy study of annealing kinetics of a deep, vacancy-hydrogen related level, labeled E5* , at 0.42 eV below the conduction band in hydrogen-implanted n-type silicon. The E5* ...

Single crystalline bulk and epitaxially grown gallium oxide (β–Ga2O3) was irradiated by 0.6 and 1.9 MeV protons to doses ranging from 5 × 109 to 6 × 1014 cm−2 in order to study the impact on charge carrier concentration ...

The structural and optical properties of magnetron sputtered thin films of (ZnO)1−x(GaN)x deposited on zinc oxide, sapphire, and silicon oxide are studied as a function of strain accumulation and post‐deposition anneals ...

In this work, an in-situ growth approach has been employed to fabricate Al:ZnO/Cu2O/Cu and Al:ZnO/ZnO/Cu2O/Cu heterojunctions using direct current (DC) and radio frequency (RF) magnetron sputtering technique in a controlled ...

Silicon-based tandem solar cells incorporating low-cost, abundant, and non-toxic metal oxide materials can increase the conversion efficiency of silicon solar cells beyond their conventional limitations with obvious economic ...

The carbon vacancy (VC) is a major limiting-defect of minority carrier lifetime in n-type 4H-SiC epitaxial layers and it is readily formed during high temperature processing. In this study, a kinetics model is put forward ...

The influence of Fermi level position and annealing ambient on the zinc vacancy VZn generation and Al diffusion is studied in monocrystalline zinc oxide (ZnO). From secondary-ion mass spectrometry and positron annihilation ...

Electronic states in the upper part of the bandgap of reduced and/or hydrogenated n-type rutile TiO2 single crystals have been studied by means of thermal admittance and deep-level transient spectroscopy measurements. The ...

As-grown and pre-oxidized silicon carbide (SiC) samples of polytype 4H have been annealed at temperatures up to 1950 °C for 10 min duration using inductive heating, or at 2000 °C for 30 s using microwave heating. The samples ...

The aluminum–zinc-vacancy (AlZn−VZn) complex is identified as one of the dominant defects in Al-containing n-type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically ...

We studied the structural properties, defect formation, and thermal stability of H in hydrothermally grown ZnO single crystals implanted with H- dose ranging from 2.5×1016 to 1×1017 cm−2. H implantation is found to create ...

Diffusion of Li into ZnO from an “infinite” surface source under oxygen-rich conditions is studied using secondary ion mass spectrometry. The Li concentration-versus-depth profiles exhibit a distinct and sharp drop, which ...

By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at ∼1.75 eV and exhibiting an activation energy ...

High-purity epitaxial layers of n-type 4H-SiC have been implanted with 4.3-MeV Si ions to a dose of 3 × 108 cm−2 and then subjected to dry isothermal oxidation at temperatures between 1050 and 1175 °C. Analysis of the ...

The lateral distributions of intrinsic point defects in n-type (0001) 4H-SiC have been investigated following room temperature irradiation with a focused beam of 10 keV protons. Laterally resolved deep level transient ...

Thermal stability of originally single crystalline wurtzite MgxZn1−xO (x ⩽ 0.3) films implanted at room temperature with 166Er ions is studied by a combination of Rutherford backscattering spectrometry, time-of-flight ...

The interaction of hydrogen (H) with lithium (Li) and zinc vacancies (VZn) in hydrothermally grown n-type zinc oxide (ZnO) has been investigated by positron annihilation spectroscopy (PAS) and secondary ion mass spectrometry. ...

We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured ...

The role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, ...