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Nanoscale n(++)-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
Ge-on-Si and Ge-on-insulator (GeOI) are the most promising materials for the next-generation nanoelectronics that can be fully integrated with silicon technology. To this day, the fabrication of Ge-based transistors with ...