Now showing items 1-19 of 19

  • Azarov, Alexander; Galeckas, Augustinas; Venkatachalapathy, Vishnukanthan; Mei, Zengxia; Du, Xiaolong; Monakhov, Eduard; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2020)
    Spectroscopic identification of defects and impurities is crucial for understanding doping asymmetry issues in ZnO and, therefore, realization of true ZnO-based bipolar devices. Chlorine (Cl) is an amphoteric impurity in ...
  • Frodason, Ymir Kalmann; Johansen, Klaus Magnus H; Galeckas, Augustinas; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    Zn substitutional lithium ( Li Zn ) and sodium ( Na Zn ) acceptors and their complexes with common donor impurities ( Al Zn , Hi, and HO) in ZnO have been studied using hybrid functional calculations. The results show ...
  • Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Zubiaga, Asier; Tuomisto, Filip; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2010)
    The nature of intrinsic defects in ZnO films grown by metal organic vapor phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis ...
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence spectroscopy. A comprehensive ...
  • Azarov, Alexander; Galeckas, Augustinas; Mieszczyński, Cyprian; Hallen, Anders; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2020)
    Bombardment of ZnO with heavy ions generating dense collision cascades is of particular interest because of the formation of nontrivial damage distribution involving a defected layer located between the surface and the ...
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José; Frodason, Ymir Kalmann; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy (VSi) in 4H-SiC is a promising single-photon emitter exhibiting ...
  • Long, Ethan Schuyler; Azarov, Alexander; Kløw, Frode; Galeckas, Augustinas; Kuznetsov, Andrej; Diplas, Spyridon (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
    Several fundamental aspects of the oxidation-induced redistribution of Ge in thin films of SiGe are studied. This includes the incorporation of Ge into the oxide and the formation of what is alternatively referred to as ...
  • Kumar, Raj; Bergum, Kristin; Riise, Heine Nygard; Monakhov, Eduard; Galeckas, Augustinas; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Polycrystalline cuprous oxide (Cu2O) thin films were sputtered, annealed (900 °C rapid thermal annealing) and subsequently implanted with various hydrogen ion (H+) doses from 5E13 to 2E15 cm−2 with a low acceleration energy ...
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Coutinho, José; Vines, Lasse (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2020)
    The silicon vacancy (VSi) in 4H-SiC is a room temperature single-photon emitter with a controllable high-spin ground state and is a promising candidate for future quantum technologies. However, controlled defect formation ...
  • Kjeldstad, Torunn; Thøgersen, Annett; Stange, Marit Synnøve Sæverud; Azarov, Alexander; Monakhov, Eduard; Galeckas, Augustinas (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
    Nanoporous and nanowire structures based on silicon (Si) have a well recognized potential in a number of applications such as photovoltaics, energy storage and thermoelectricity. The immiscibility of Si and aluminum (Al) ...
  • Woerle, Judith; Bathen, Marianne Etzelmüller; Prokscha, Thomas; Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Grossner, Ulrike (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Low-energy muon-spin-rotation spectroscopy (LE-μSR) is employed to study silicon and carbon vacancies in proton-irradiated 4H-SiC. We show that the implanted muon is quickly attracted to the negative Si vacancy (VSi), where ...
  • Long, Ethan Schuyler; Galeckas, Augustinas; Kuznetsov, Andrej; Ronda, Antoine; Favre, Luc; Berbezier, Isabelle; Radamson, Henry H. (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2013)
    The present study examines the kinetics of dry thermal oxidation of (111), (110), and (100) silicon-germanium (SiGe) thin epitaxial films and the redistribution of Ge near the oxidation interface with the aim of facilitating ...
  • Vasquez, Geraldo Cristian; Johansen, Klaus Magnus H; Galeckas, Augustinas; Vines, Lasse; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    The optical properties of single ion tracks have been studied in ZnO implanted with Ge by combining depth-resolved hyperspectral cathodoluminescence (CL) and photoluminescence (PL) spectroscopy techniques. The results ...
  • Schifano, Ramon; Jakiela, R; Galeckas, Augustinas; Kopalko, K; Herklotz, Frank; Johansen, Klaus Magnus H; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    The impact of hydrogen in ZnO is revealed by combining reaction dynamics calculations with temperature dependent Hall (TDH), photoluminescence, and secondary ion mass spectrometry measurements performed on H, 2H, and He ...
  • Kjeldstad, Torunn; Thøgersen, Annett; Stange, Marit Synnøve Sæverud; Jensen, Ingvild Julie Thue; Nilsen, Ola; Galeckas, Augustinas; Monakhov, Eduard (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Nanoporous amorphous silicon (a-Si) with <5 nm cylindrical pores have been fabricated by phase separation of aluminum (Al) and silicon, forming self-assembled Al nanowires (NWs), followed by subsequent removal of Al by wet ...
  • Vasquez, Geraldo Cristian; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Bazioti, Kalliopi; Johansen, Klaus Magnus H; Maestre, D.; Cremades, A.; Prytz, Øystein; Moe, A.M.; Kuznetsov, Andrej; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, ...
  • Kjeldstad, Torunn; Thøgersen, Annett; Stange, Marit Synnøve Sæverud; Jensen, Ingvild Julie Thue; Monakhov, Eduard; Galeckas, Augustinas (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    We present a study of the surface effects and optical properties of the self-assembled nanostructures comprised of vertically aligned 5 nm-diameter Al nanowires embedded in an amorphous Si matrix (a-Si:Al). The controlled ...
  • Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Trunk, Mareike; Zhang, Tianchong; Azarov, Alexander; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2011)
    A phenomenon of wurtzite (w), zincblende (zb), and rock-salt (rs) phase separation was investigated in ZnCdO films having Cd contents in the range of 0%–60% settling a discussion on the phase stability issues in ZnCdO. ...
  • Knutsen, Knut Erik; Galeckas, Augustinas; Zubiaga, Asier; Tuomisto, Filip; Farlow, Gary C.; Svensson, Bengt Gunnar; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2012)
    By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at ∼1.75 eV and exhibiting an activation energy ...