Browsing Det matematisk-naturvitenskapelige fakultet by Author "Vines, Lasse"

Now showing items 21-40 of 80

  • Electrical charge state identification and control for the silicon vacancy in 4H-SiC 
    Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José; Frodason, Ymir Kalmann; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy (VSi) in 4H-SiC is a promising single-photon emitter exhibiting ...
  • Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; Implications for instrinsic defect formation and charge neutrality level 
    Vines, Lasse; Bhoodoo, Chidanand; Von Wenckstern, H; Grundmann, M (Journal article / Tidsskriftartikkel / SubmittedVersion, 2018)
    The evolution of sheet resistance of n-type In2O3 and Ga2O3 exposed to bombardment with MeV 12C and 28Si ions at 35 K is studied in situ. While the sheet resistance of Ga2O3 increased by more than eight orders of magnitude ...
  • Electrically-active defects in reduced and hydrogenated rutile TiO2 
    Bonkerud, Julie; Zimmermann, Christian; Weiser, Philip Michael; Herklotz, Frank; Seiffert, Christoph; Verhoeven, Espen Førdestrøm; Vines, Lasse; Monakhov, Eduard (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2021)
  • Elucidating the origin of external quantum efficiency losses in cuprous oxide solar cells through defect analysis 
    Gan, Jiantuo; Hoye, Robert L.Z; Levskaya, Yulia; Vines, Lasse; Marin, Andrew T.; MacManus-Driscoll, Judith L.; Monakhov, Eduard (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Heterojunction Cu2O solar cells are an important class of Earth-abundant photovoltaics that can be synthesized by a variety of techniques, including electrochemical deposition (ECD) and thermal oxidation (TO). The latter ...
  • Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials 
    Borgersen, Jon; Vines, Lasse; Frodason, Ymir Kalmann; Kuznetsov, Andrej; von Wenckstern, Holger; Grundmann, Marius; Allen, Martin; Perez, Jesus Zuniga; Johansen, Klaus Magnus H (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    The evolution of electrical resistance as function of defect concentration is examined for the unipolar n-conducting oxides CdO, β-Ga2O3, In2O3, SnO2 and ZnO in order to explore the predictions of the amphoteric defect ...
  • Fabrication and characterization of Schottky barrier diodes on rutile TiO2 
    Bonkerud, Julie; Zimmermann, Christian; Weiser, Philip Michael; Aarholt, Thomas; Verhoeven, Espen Førdestrøm; Vines, Lasse; Monakhov, Eduard; Herklotz, Frank (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
  • Fermi level controlled point defect balance in ion irradiated indium oxide 
    Borgersen, Jon; Johansen, Klaus Magnus H; Vines, Lasse; von Wenckstern, Holger; Grundmann, Marius; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2021)
    Fermi level controlled point defect balance is demonstrated in ion irradiated indium oxide (In2O3). Specifically, our observations can be sub-divided into the formation of isolated Frenkel pairs and secondary defects, ...
  • First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC 
    Bathen, Marianne Etzelmüller; Vines, Lasse; Coutinho, José (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Point defects in solids are promising single-photon sources with application in quantum sensing, computing and communication. Herein, we describe a theoretical framework for studying electric field effects on defect-related ...
  • Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms-Range Flash Lamp Annealing 
    Duan, Juanmei; Wang, Mao; Vines, Lasse; Bottger, Roman; Helm, Manfred; Zeng, Yu-Jia; Zhou, Shengqiang; Prucnal, Slawomir (Journal article / Tidsskriftartikkel / SubmittedVersion, 2019)
    With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integration of high mobility semiconductors, such as III–V compound semiconductors, with complementary metal‐oxide‐semiconductor ...
  • Formation and control of the E2* center in implanted b-Ga2O3 by reverse-bias and zero-bias annealing 
    Zimmermann, Christian; Verhoeven, Espen Førdestrøm; Frodason, Ymir Kalmann; Weiser, Philip Michael; Varley, Joel B; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Deep-level transient spectroscopy measurements are conducted onβ-Ga2O3thin-filmsimplanted with helium and hydrogen (H) to study the formation of the defect levelE∗2(EA=0.71 eV) during heat treatments under an applied ...
  • Formation and control of the E2* center in implanted b-Ga2O3 by reverse-bias and zero-bias annealing 
    Zimmermann, Christian; Verhoeven, Espen Førdestrøm; Frodason, Ymir Kalmann; Weiser, Philip Michael; Varley, Joel B; Vines, Lasse (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2020)
    Deep-level transient spectroscopy measurements are conducted on β-Ga2O3 thin-films implanted with helium and hydrogen (H) to study the formation of the defect level E2 lowast (EA = 0.71 eV) during heat treatments under an ...
  • Formation and functionalization of Ge-nanoparticles in ZnO 
    Aarseth, Bjørn Lupton; Granerød, Cecilie Skjold; Galeckas, Augustinas; Azarov, Alexander; Nguyen, Phuong Dan; Prytz, Øystein; Vines, Lasse (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2021)
    Semiconductor nanocrystals are often proposed as a viable route to improve solar energy conversion in photovoltaics and photoelectrochemical systems. Embedding the nanocrystals in, e.g. a transparent and conducting electrode ...
  • Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC 
    Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Kuznetsov, Andrej; Vines, Lasse (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2022)
    Electrical properties of point defects in 4𝐻-SiC have been studied extensively, but those related to carbon interstitials (Ci) have remained elusive until now. Indeed, when introduced via ion irradiation or implantation, ...
  • Formation of N2 bubbles along grain boundaries in (ZnO)1−x(GaN)x: nanoscale STEM-EELS studies 
    Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Kuznetsov, Andrej; Vines, Lasse; Prytz, Øystein (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Direct evidence of N2 formation after annealing of (ZnO)1−x(GaN)x alloys was revealed. N2 was trapped by VZn+Ga-clusters, forming faceted voids along grain boundaries. This study shows that N–N bonding is a competitive ...
  • Formation of γ-Ga2O3 by ion implantation: Polymorphic phase transformation of β-Ga2O3 
    Garcia Fernandez, Javier; Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; Karlsen, Ole Bjørn; Vines, Lasse; Prytz, Øystein (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2022)
    Ion implantation induced phase transformation and the crystal structure of a series of ion implanted β-Ga 2 O 3 samples were studied using electron diffraction, high resolution transmission electron microscopy, and scanning ...
  • High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates 
    Gogova, Daniela; Olsen, Vegard Skiftestad; Bazioti, Kalliopi; Lee, In-Hwan; Prytz, Øystein; Vines, Lasse; Kuznetsov, Andrej (Journal article / Tidsskriftartikkel / SubmittedVersion, 2020)
    Making a systematic effort, we have developed single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 °C by co-sputtering from metal targets in a nitrogen atmosphere, ...
  • Highly Correlated Hydride Ion Tracer Diffusion in SrTiO3–xHx Oxyhydrides 
    Liu, Xin; Bjørheim, Tor Svendsen; Vines, Lasse; Fjellvåg, Øystein; Granerød, Cecilie Skjold; Prytz, Øystein; Yamamoto, Takafumi; Kageyama, Hiroshi; Norby, Truls Eivind; Haugsrud, Reidar (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
    Mixed oxide hydride anion systems constitute a novel class of materials exhibiting intriguing properties such as solid-state hydride ion conduction and fast anion exchange. In this contribution we derive the kinetics of ...
  • Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime 
    Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Galeckas, Augustinas; Kumar, Piyush; Kuznetsov, Andrej; Grossner, Ulrike; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2024)
  • Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3 
    Ingebrigtsen, Mads Eide; Kuznetsov, Andrej; Svensson, Bengt Gunnar; Alfieri, Giovanni; Mihaila, Andrei; Badstübner, U.; Perron, A; Vines, Lasse; Varley, Joel B (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    Single crystalline bulk and epitaxially grown gallium oxide (β–Ga2O3) was irradiated by 0.6 and 1.9 MeV protons to doses ranging from 5 × 109 to 6 × 1014 cm−2 in order to study the impact on charge carrier concentration ...
  • Influence of a thin amorphous surface layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC 
    Linnarsson, MK; Hallen, Anders; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    Ion implantation is an important technique in semiconductor processing and has become a key technology for 4H-SiC devices. Today, aluminum (Al) implantations are routinely used for p-type contacts, p+-emitters, terminations ...