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The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
(Journal article / Tidsskriftartikkel / SubmittedVersion, 2017)
Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2017)
In the present contribution we assess the luminescent properties of amorphous europium titanium phosphate thin films. The films have been deposited by atomic layer deposition, using the precursor combinations Eu(thd)3 (thd ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2013)
Ln2O3 thin films with optically active f-electrons (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) have been grown on Si(100) and soda lime glass substrates by atomic layer deposition (ALD) using Ln(thd)3 (Hthd = ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2014)
Luminescent europium titanium oxides (EuxTiyOz) have been deposited as thin films by atomic layer deposition (ALD) in the temperature range 225 to 375 °C with control of the stoichiometry from pure TiO2 to pure Eu2O3, and ...
(Journal article / Tidsskriftartikkel / Published version; Peer reviewed, 2013)
The ferroelectric and electro-optical properties of LiNbO3 make it an important material for current and future applications. It has also been suggested as a possible lead-free replacement for present PZT-devices. The ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2016)
Thin films of complex alkali oxides are frequently investigated due to the large range of electric effects that are found in this class of materials. Their piezo- and ferroelectric properties also place them as sustainable ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2017)
Organic–inorganic hybrid materials are an emerging class of materials suitable for deposition by the molecular layer deposition (MLD) technique. Their toolbox is now expanded to include linkers of amino acids, which when ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2018)
Thin film of silicon is an interesting material for many technological applications in electronic industry and in energy harvesting technologies, but requires a method for controlled growth of thin films. The purpose of ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2017)
We demonstrate controlled deposition by atomic layer deposition of YVO4:Yb3+ thin films exhibiting an intense NIR emission under UV excitation after post-deposition annealing at 1000 °C. The samples are deposited using the ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2017)
UV to visible and near-infrared converting thin films of YbVO4 have been deposited by atomic layer deposition, using the precursor combinations Yb(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and O3, and VO(thd)2 and ...