A study of the laser doping technique from a phosohorus glass layer as a dopant source was carried out. This was done with the purpose of implementing a selective emitter in a crystal silicon solar cell. The main laser parameters studied were the average power output and the pulse repetition frequency. This led us to conclusions regarding the influence of the laser pulse shape, on the produced doping concentration profiles, as well as quality of the recrystallized irradiated area. With this, optimal laser parameters are chosen for the elaboration of the selective emitter solar cell, but the results are useful in any other field that requires the application of this versatile technique. Regarding the implementation of the selective emitter solar cell the whole process was carried out. The laser parameters developed from the laser doping study were used and it was found out that the selective emitter does improve the blue response of the solar cell. Based on the results obtained various optimization steps are sugested for the improvement of the selective emitter solar cell. Finally it is shown that the elaboration of a selective emitter by a laser doping technique, is a very adaptable process which if correctly implented can lead to considerable increase in the performace of the cells.