Now showing items 1-5 of 5

  • Bathen, Marianne Etzelmüller; Coutinho, José; Ayedh, Hussein Mohammed Hussein; Hassan, Jawad U; Farkas, Ildiko; Öberg, Sven; Frodason, Ymir Kalmann; Svensson, Bengt Gunnar; Vines, Lasse (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2019)
    We investigate the migration mechanism of the carbon vacancy (VC) in silicon carbide (SiC) using a combination of theoretical and experimental methodologies. The VC, commonly present even in state-of-the-art epitaxial SiC ...
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José; Frodason, Ymir Kalmann; Vines, Lasse (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
    Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy (VSi) in 4H-SiC is a promising single-photon emitter exhibiting ...
  • Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, R; Hallen, Anders; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2014)
    As-grown and pre-oxidized silicon carbide (SiC) samples of polytype 4H have been annealed at temperatures up to 1950 °C for 10 min duration using inductive heating, or at 2000 °C for 30 s using microwave heating. The samples ...
  • Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2018)
    The carbon vacancy (VC) is a major limiting-defect of minority carrier lifetime in n-type 4H-SiC epitaxial layers and it is readily formed during high temperature processing. In this study, a kinetics model is put forward ...
  • Woerle, Judith; Bathen, Marianne Etzelmüller; Prokscha, Thomas; Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Grossner, Ulrike (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Low-energy muon-spin-rotation spectroscopy (LE-μSR) is employed to study silicon and carbon vacancies in proton-irradiated 4H-SiC. We show that the implanted muon is quickly attracted to the negative Si vacancy (VSi), where ...