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(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2016)
Sublimation-grown 3C-SiC crystals were implanted with 2 atomic percent of boron ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 8.5×1016 atoms/cm2. The samples were then ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2016)
Energy filtering has been suggested by many authors as a means to improve thermoelectric properties. The idea is to filter away low-energy charge carriers in order to increase Seebeck coefficient without compromising ...
(Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2016)
In this work we present a significant advancement in cubic silicon carbide (3C-SiC) growth in terms of crystal quality and domain size, and indicate its potential use in photovoltaics. To date, the use of 3C-SiC for ...