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(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
An intriguing phenomenon of electrically active defect generation is observed in homoepitaxial β-Ga2O3 films exposed to reverse bias at elevated temperatures. In particular, heating samples up to 675 K in the course of ...
(Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2019)
Single crystalline bulk and epitaxially grown gallium oxide (β–Ga2O3) was irradiated by 0.6 and 1.9 MeV protons to doses ranging from 5 × 109 to 6 × 1014 cm−2 in order to study the impact on charge carrier concentration ...