Now showing items 1-1 of 1

  • Smalc-Koziorοwska, Julita; Moneta, J.; Chatzopoulou, P.; Vasileiadis, I.G.; Bazioti, Kalliopi; Prytz, Øystein; Belabbas, I.; Komninou, Ph.; Dimitrakopulos, G.P. (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2020)
    Abstract III-nitride compound semiconductors are breakthrough materials regarding device applications. However, their heterostructures suffer from very high threading dislocation (TD) densities that impair several aspects ...