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  • Beaufils, C.; Redjem, W.; Rousseau, E.; Jacques, V.; Kuznetsov, Andrej; Raynaud, Christophe; Voisin, C.; Benali, A.; Herzig, T.; Pezzagna, S.; Meijer, J.; Abbarchi, M.; Cassabois, G. (Journal article / Tidsskriftartikkel / PublishedVersion; Peer reviewed, 2018)
    We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator ...