Zinc oxide (ZnO) is becoming an attractive semiconductor materialwithin optoelectronics and solar cell applications. The usage of ZnO as a transparent conducting oxide (TCO) is interesting both aselectrode in Si-based cells and used in band gap engineeredheterojunction solar cells. Device performance can be estimated bycharge carrier simulation using commercially available software(TCAD), but a reliable model of the transport properties of ZnO isneeded.
In the present study, ZnO-based heterostructure and Schottky contacthave been modelled and simulated for their electricalcharacteristics. The ZnO model was developed and investigated throughexperimental characterization of Pd Schottky contacts on ZnO usingcapacitance-voltage (CV), current-voltage (IV), deep level transientspectroscopy (DLTS) and admittance spectroscopy (ADSPEC).
A heterostructure of highly doped n-type ZnO on Si was explored forits potential within solar cell application. In the ideal model, anillumination using single wavelength of 2eV and a power of2.9mW/cm^2 corresponding to AM1.5 was implemented andthe highest achieved conversion efficiency was 15.9% on p-type Sisubstrate.