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Modelling and characterization of electrical properties of ZnO-based heterostructure for solar cell applications

Tang, Chi Kwong
Master thesis
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tang.pdf (1.483Mb)
Year
2009
Permanent link
http://urn.nb.no/URN:NBN:no-22696

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  • Fysisk institutt [2515]
Abstract
Zinc oxide (ZnO) is becoming an attractive semiconductor material

within optoelectronics and solar cell applications. The usage

of ZnO as a transparent conducting oxide (TCO) is interesting both as

electrode in Si-based cells and used in band gap engineered

heterojunction solar cells. Device performance can be estimated by

charge carrier simulation using commercially available software

(TCAD), but a reliable model of the transport properties of ZnO is

needed.

In the present study, ZnO-based heterostructure and Schottky contact

have been modelled and simulated for their electrical

characteristics. The ZnO model was developed and investigated through

experimental characterization of Pd Schottky contacts on ZnO using

capacitance-voltage (CV), current-voltage (IV), deep level transient

spectroscopy (DLTS) and admittance spectroscopy (ADSPEC).

A heterostructure of highly doped n-type ZnO on Si was explored for

its potential within solar cell application. In the ideal model, an

illumination using single wavelength of 2eV and a power of

2.9mW/cm^2 corresponding to AM1.5 was implemented and

the highest achieved conversion efficiency was 15.9% on p-type Si

substrate.
 
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