Now showing items 1-2 of 2

  • Ma, Quanbao; Galeckas, Augustinas; Azarov, Alexander; Thøgersen, Annett; Carvalho, Patricia; Wright, Daniel Nilsen; Diplas, Spyridon; Løvvik, Ole Martin; Jokubavicius, Valdas; Liu, Xinyu; Sun, Jianwu; Syväjärvi, Mikael; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2016)
    Sublimation-grown 3C-SiC crystals were implanted with 2 atomic percent of boron ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 8.5×1016 atoms/cm2. The samples were then ...
  • Syväjärvi, Mikael; Ma, Quanbao; Jokubavicius, Valdas; Galeckas, Augustinas; Sun, Jianwu; Liu, Xinyu; Jansson, Mattias; Wellmann, Peter; Linnarsson, Margareta; Runde, Paal; Johansen, Bertil; Thøgersen, Annett; Diplas, Spyridon; Carvalho, Patricia; Løvvik, Ole Martin; Wright, Daniel Nilsen; Azarov, Alexander; Svensson, Bengt Gunnar (Journal article / Tidsskriftartikkel / AcceptedVersion; Peer reviewed, 2016)
    In this work we present a significant advancement in cubic silicon carbide (3C-SiC) growth in terms of crystal quality and domain size, and indicate its potential use in photovoltaics. To date, the use of 3C-SiC for ...